Discrete Semiconductor Products

SI1303DL-T1-E3

Obsolete

MOSFET P-CH 20V 670MA SC70-3

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 670MA SC70-3

Technical Specifications

Parameters and characteristics for this part

Specification	SI1303DL-T1-E3

Current - Continuous Drain (Id) @ 25°C	670 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.2 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max)	290 mW
Rds On (Max) @ Id, Vgs [Max]	430 mOhm
Supplier Device Package	SC-70-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.4 V

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)
Vishay General Semiconductor - Diodes Division SI1303DL-T1-E3	Surface Mount	2.2 nC	2.5 V 4.5 V	290 mW	430 mOhm	SC-70 SOT-323	-55 °C	150 °C	1.4 V	MOSFET (Metal Oxide)	20 V	SC-70-3	670 mA	P-Channel	12 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 670mA (Ta) 290mW (Ta) Surface Mount SC-70-3

Technical documentation and resources

No documents available