Discrete Semiconductor Products
IXTP01N100D
ActiveLittelfuse/Commercial Vehicle Products
POWER MOSFET, N CHANNEL, 1 KV, 400 MA, 50 OHM, TO-220, THROUGH HOLE
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Discrete Semiconductor Products
IXTP01N100D
ActiveLittelfuse/Commercial Vehicle Products
POWER MOSFET, N CHANNEL, 1 KV, 400 MA, 50 OHM, TO-220, THROUGH HOLE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IXTP01N100D |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 400 mA |
| Drain to Source Voltage (Vdss) | 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 0 V |
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.8 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 1.1 W, 25 W |
| Rds On (Max) @ Id, Vgs | 80 Ohm |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IXTP01N100D Series
Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like characteristics. They are suitable for level shifting, solid state relays, current regulators, and active loads.
Documents
Technical documentation and resources