Discrete Semiconductor Products

PSMN6R5-80PS,127

Obsolete

MOSFET N-CH 80V 100A TO220AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 80V 100A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN6R5-80PS,127

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	71 nC
Input Capacitance (Ciss) (Max) @ Vds	4461 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	210 W
Rds On (Max) @ Id, Vgs	6.9 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Technology	Supplier Device Package	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
Freescale Semiconductor - NXP PSMN6R5-80PS,127	N-Channel	4461 pF	71 nC	210 W	6.9 mOhm	10 V	100 A	TO-220-3	Through Hole	MOSFET (Metal Oxide)	TO-220AB	20 V	-55 °C	175 ░C	80 V
Freescale Semiconductor - NXP PSMN6R5-80BS,118	N-Channel	4461 pF	71 nC	210 W	6.9 mOhm	10 V	100 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	MOSFET (Metal Oxide)	D2PAK	20 V	-55 °C	175 ░C	80 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 80 V 100A (Tc) 210W (Tc) Through Hole TO-220AB

Technical documentation and resources