Discrete Semiconductor Products

SI7112DN-T1-GE3

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MOSFET N-CH 30V 11.3A PPAK1212-8

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Discrete Semiconductor Products

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MOSFET N-CH 30V 11.3A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7112DN-T1-GE3

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	27 nC
Input Capacitance (Ciss) (Max) @ Vds	2610 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	7.5 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Power Dissipation (Max)	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SI7112DN-T1-GE3	2610 pF	N-Channel	7.5 mOhm	Surface Mount	27 nC	150 °C	-50 °C	30 V	1.5 V	MOSFET (Metal Oxide)	PowerPAK® 1212-8	1.5 W	12 V	PowerPAK® 1212-8	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 11.3A (Tc) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources