Specification	FDPF4N60NZ

Current - Continuous Drain (Id) @ 25°C	3.8 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.8 nC
Input Capacitance (Ciss) (Max) @ Vds	510 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	28 W
Rds On (Max) @ Id, Vgs	2.5 Ohm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

FDPF4D5N10C Series

Power MOSFET, N-Channel, UniFETTM II, 600 V, 3.8 A, 2.5 Ω, TO-220F

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max)
ON Semiconductor FDPF4N60NZ	-55 °C	150 °C	10 V	25 V	510 pF	N-Channel	28 W	600 V	TO-220-3 Full Pack	Through Hole	5 V	3.8 A	10.8 nC	TO-220F-3	2.5 Ohm	MOSFET (Metal Oxide)
ON Semiconductor FDPF4D5N10C	-55 °C	175 ░C	10 V	20 V	5065 pF	N-Channel		100 V	TO-220-3 Full Pack	Through Hole		128 A		TO-220F-3	4.5 mOhm	MOSFET (Metal Oxide)	68 nC	4 V	2.4 W 37.5 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDPF4D5N10C Series

UniFETTMII MOSFET is a high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.