Specification	ISL9R1560P2

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	40 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220-2
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.2 V

ISL9R1560G_F085 Series

600V, 15A, 1.8V, TO-247 (2-lead)<BR>Stealth™ Rectifier

Part	Package / Case	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Current - Average Rectified (Io)	Qualification	Supplier Device Package	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Grade	Technology
ON Semiconductor ISL9R1560G2-F085	TO-247-2	40 ns	600 V	200 mA 500 ns	15 A	AEC-Q101	TO-247-2	Through Hole	2.2 V	175 ░C	-55 C	100 µA	Automotive	Avalanche
ON Semiconductor ISL9R1560PF2	TO-220-2 Full Pack	40 ns	600 V	200 mA 500 ns	15 A		TO-220F-2L	Through Hole	2.2 V	150 °C	-55 °C	100 µA		Avalanche
ON Semiconductor ISL9R1560P2	TO-220-2	40 ns	600 V	200 mA 500 ns	15 A		TO-220-2	Through Hole	2.2 V	175 ░C	-55 C	100 µA		Avalanche
ON Semiconductor ISL9R1560S3ST	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	40 ns	600 V	200 mA 500 ns	15 A		TO-263 (D2PAK)	Surface Mount	2.2 V	175 ░C	-55 C	100 µA		Avalanche

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

ISL9R1560G_F085 Series

The ISL9R1560G2_F085 is Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverserecovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions.This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRMand short ta phase reduceloss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additionalsnubber circuitry. Consider using the Stealth™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.