CMS07P10V8-HF

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MOSFET P-CH 100V 2.2A/7A PRPAK

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Discrete Semiconductor Products

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MOSFET P-CH 100V 2.2A/7A PRPAK

Technical Specifications

Parameters and characteristics for this part

Specification	CMS07P10V8-HF

Current - Continuous Drain (Id) @ 25°C	7 A, 2.2 A
Drain to Source Voltage (Vdss)	100 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	680 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	25 W, 2.5 W
Rds On (Max) @ Id, Vgs	260 mOhm
Supplier Device Package	PR-PAK (3x3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Supplier Device Package
Comchip Technology CMS07P10V8-HF	MOSFET (Metal Oxide)	16 nC	20 V	P-Channel	4 V	100 V	Surface Mount	260 mOhm	2.5 W 25 W	2.2 A 7 A	-55 °C	150 °C	680 pF	8-PowerVDFN	PR-PAK (3x3)

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General part information

P-Channel 100 V 2.2A (Ta), 7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount PR-PAK (3x3)

Technical documentation and resources