Specification	NVB5860NT4G

Current - Continuous Drain (Id) @ 25°C	220 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	180 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	10760 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	283 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	3 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NVB5860N Series

Power MOSFET 60V 220A 3 mOhm Single N-Channel D2PAK

Part	Qualification	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Technology	Grade	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NVB5860NT4G	AEC-Q101	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	D2PAK	220 A	4 V	20 V	180 nC	283 W	MOSFET (Metal Oxide)	Automotive	N-Channel	10760 pF	60 V	3 mOhm	-55 °C	175 ░C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Automotive Power MOSFET. 60 V, 3 mOhm, 220 A, N-Channel, D2PAK. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.