BUK7M33-60EX

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MOSFET N-CH 60V 24A LFPAK33

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Discrete Semiconductor Products

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MOSFET N-CH 60V 24A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7M33-60EX

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10.9 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	628 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	44 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Grade	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
Freescale Semiconductor - NXP BUK7M33-60EX	MOSFET (Metal Oxide)	24 A	33 mOhm	20 V	N-Channel	10.9 nC	60 V	-55 °C	175 ░C	10 V	Surface Mount	44 W	Automotive	AEC-Q101	628 pF	LFPAK33

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General part information

N-Channel 60 V 24A (Tc) 44W (Tc) Surface Mount LFPAK33

Technical documentation and resources