Discrete Semiconductor Products

SI7430DP-T1-GE3

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TRANS MOSFET N-CH 150V 7.2A 8-PIN POWERPAK SO T/R

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Discrete Semiconductor Products

Active

TRANS MOSFET N-CH 150V 7.2A 8-PIN POWERPAK SO T/R

Technical Specifications

Parameters and characteristics for this part

Specification	SI7430DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	26 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	8 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC
Input Capacitance (Ciss) (Max) @ Vds	1735 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	5.2 W, 64 W
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max)	Package / Case
Vishay General Semiconductor - Diodes Division SI7430DP-T1-GE3	150 V	PowerPAK® SO-8	26 A	4.5 V	1735 pF	20 V	45 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	8 V 10 V	43 nC	N-Channel	5.2 W 64 W	PowerPAK® SO-8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 150 V 26A (Tc) 5.2W (Ta), 64W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources