TO-92-3(StandardBody),TO-226_straightlead

Discrete Semiconductor Products

BC557

Obsolete

ON Semiconductor

50 V, 100 MA PNP BIPOLAR JUNCTION EPITAXIAL SILICON TRANSISTOR

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Discrete Semiconductor Products

BC557

Obsolete

ON Semiconductor

50 V, 100 MA PNP BIPOLAR JUNCTION EPITAXIAL SILICON TRANSISTOR

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DocumentsDatasheet Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BC557

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	110
Frequency - Transition	150 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	500 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	650 mV
Voltage - Collector Emitter Breakdown (Max)	45 V

BC557B(LEGACY%20FAIRCHILD) Series

100 mA, 45 V, PNP Bipolar Juction Transistor

Part	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature	Supplier Device Package	Frequency - Transition	Transistor Type	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce
ON Semiconductor BC557	100 mA	500 mW	650 mV	TO-226-3 TO-92-3	15 nA	45 V	150 °C	TO-92-3	150 MHz	PNP	Through Hole	110
ON Semiconductor BC557ATA	100 mA	500 mW	650 mV	TO-226-3 TO-92-3	15 nA	45 V	150 °C	TO-92-3	150 MHz	PNP	Through Hole	110
ON Semiconductor BC557_J35Z	100 mA	500 mW	650 mV	TO-226-3 TO-92-3	15 nA	45 V	150 °C	TO-92-3	150 MHz	PNP	Through Hole	110
ON Semiconductor BC557BTF	100 mA	500 mW	650 mV	TO-226-3 TO-92-3	15 nA	45 V	150 °C	TO-92-3	150 MHz	PNP	Through Hole	200
ON Semiconductor BC557_D11Z	100 mA	500 mW	650 mV	TO-226-3 TO-92-3	15 nA	45 V	150 °C	TO-92-3	150 MHz	PNP	Through Hole	110
ON Semiconductor BC557C	100 mA	625 mW	650 mV	TO-226-3 TO-92-3 Long Body	100 nA	45 V		TO-92	320 MHz	PNP	Through Hole	420	-55 °C	150 °C	TO-226
ON Semiconductor BC557AZL1G	100 mA	625 mW	650 mV	Formed Leads TO-226-3 TO-92-3 Long Body	100 nA	45 V		TO-92	320 MHz	PNP	Through Hole		-55 °C	150 °C	TO-226	120
ON Semiconductor BC557CG	100 mA	625 mW	650 mV	TO-226-3 TO-92-3 Long Body	100 nA	45 V		TO-92	320 MHz	PNP	Through Hole	420	-55 °C	150 °C	TO-226
ON Semiconductor BC557BRL1G	100 mA	625 mW	650 mV	Formed Leads TO-226-3 TO-92-3 Long Body	100 nA	45 V		TO-92	320 MHz	PNP	Through Hole		-55 °C	150 °C	TO-226
ON Semiconductor BC557BTAR	100 mA	500 mW	650 mV	TO-226-3 TO-92-3	15 nA	45 V	150 °C	TO-92-3	150 MHz	PNP	Through Hole	200

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

BC557B(LEGACY%20FAIRCHILD) Series

The 100 mA, 45 V, PNP Bipolar Juction Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.

Documents

Technical documentation and resources