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Discrete Semiconductor Products

IXTF1N250

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Littelfuse/Commercial Vehicle Products

DISCMSFT NCH STD-VERYHIVOLT I4-PAK ISO+

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Discrete Semiconductor Products

IXTF1N250

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCH STD-VERYHIVOLT I4-PAK ISO+

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTF1N250

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	2500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Input Capacitance (Ciss) (Max) @ Vds	1660 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	i4-Pac™-5 (3 Leads)
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs	40 Ohm
Supplier Device Package	ISOPLUS i4-PAC™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IXTF1N450 Series

DiscMSFT NCh Std-VeryHiVolt I4-PAK ISO+

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]
Littelfuse/Commercial Vehicle Products IXTF1N250	1660 pF	41 nC	40 Ohm	20 V	N-Channel	1 A	4 V	-55 °C	150 °C	110 W	ISOPLUS i4-PAC™	Through Hole	10 V	i4-Pac™-5 (3 Leads)	MOSFET (Metal Oxide)	2500 V
Littelfuse/Commercial Vehicle Products IXTF1N450		40 nC		20 V	N-Channel	900 mA	6.5 V	-55 °C	150 °C		ISOPLUS i4-PAC™	Through Hole	10 V	i4-Pac™-5 (3 Leads)	MOSFET (Metal Oxide)	4500 V	85 Ohm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 42.62

Description

General part information

IXTF1N450 Series

The Very High Voltage series of N-Channel Standard MOSFETs are specifically designed to address demanding, fast-switching power conversion applications requiring very high blocking voltages up to 4.5kV. Thanks to the positive temperature coefficient of their on-state resistance, these very high voltage MOSFETs are ideally suited for parallel device operation, which provides cost-effective solutions compared to series-connected, lower-voltage MOSFET ones. This also results in reduction in the associated gate drive circuitry, further simplifying the design, saving PCB board space, and improving the reliability of the overall system. Advantages: Easy to mount Space savings High power density

Documents

Technical documentation and resources