BUK7Y1R4-40HX

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BUK7Y1R4-40H/SOT669/LFPAK

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Discrete Semiconductor Products

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BUK7Y1R4-40H/SOT669/LFPAK

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7Y1R4-40HX

Current - Continuous Drain (Id) @ 25°C	190 A
Grade	Automotive
Power Dissipation (Max) [Max]	395 W
Qualification	AEC-Q101
Vgs (Max) [Max]	20 V
Vgs (Max) [Min]	-10 V

Part	Grade	Vgs (Max) [Max]	Vgs (Max) [Min]	Qualification	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Power Dissipation (Max)	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)
Freescale Semiconductor - NXP BUK7Y1R4-40HX	Automotive	20 V	-10 V	AEC-Q101	190 A	395 W
Freescale Semiconductor - NXP BUK7Y1R7-40HX	Automotive	20 V	-10 V	AEC-Q101	120 A		294 W	LFPAK56 Power-SO8	SC-100 SOT-669	3.6 V	MOSFET (Metal Oxide)	1.7 mOhm	-55 °C	175 ░C	N-Channel	Surface Mount	6142 pF	96 nC	40 V	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

190A (Tc) 395W (Tc)

Technical documentation and resources