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RJK6006DPP-A0#T2
Discrete Semiconductor Products

RJK6006DPP-A0#T2

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Renesas Electronics Corporation

NCH POWER MOSFET 600V 5A 1600MOHM TO-220F

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RJK6006DPP-A0#T2
Discrete Semiconductor Products

RJK6006DPP-A0#T2

Active
Renesas Electronics Corporation

NCH POWER MOSFET 600V 5A 1600MOHM TO-220F

Technical Specifications

Parameters and characteristics for this part

SpecificationRJK6006DPP-A0#T2
Current - Continuous Drain (Id) @ 25°C10 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1100 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)30 W
Rds On (Max) @ Id, Vgs920 mOhm
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1711$ 3.88

Description

General part information

RJK6006DPP-A0 Series

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Documents

Technical documentation and resources