Discrete Semiconductor Products

CDBJFSC3650-G

Obsolete

DIODE SIL CARBIDE 650V 3A TO220F

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Discrete Semiconductor Products

Obsolete

DIODE SIL CARBIDE 650V 3A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	CDBJFSC3650-G

Capacitance @ Vr, F	190 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220F
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Speed	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Technology	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Supplier Device Package
Comchip Technology CDBJFSC3650-G	No Recovery Time	0 ns	650 V	1.7 V	Through Hole	SiC (Silicon Carbide) Schottky	100 µA	190 pF	3 A	175 ░C	-55 C	TO-220-2 Full Pack	TO-220F

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 3A Through Hole TO-220F

Technical documentation and resources

No documents available