Discrete Semiconductor Products

S8M-E3/I

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8A, 1000V, STD RECT , SMC

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Discrete Semiconductor Products

Active

8A, 1000V, STD RECT , SMC

Technical Specifications

Parameters and characteristics for this part

Specification	S8M-E3/I

Capacitance @ Vr, F	72 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 çA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMC, DO-214AB
Reverse Recovery Time (trr)	3.6 µs
Speed	500 ns, 1 A
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	975 mV

Part	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Package / Case	Technology	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Speed [Min]
Vishay General Semiconductor - Diodes Division S8M-E3/I	DO-214AB (SMC)	1000 V	10 çA	8 A	DO-214AB SMC	Standard	72 pF	150 °C	-55 °C	Surface Mount	975 mV	1 A 500 ns	3.6 µs
Vishay General Semiconductor - Diodes Division S8MS-E3/I	DO-214AB (SMC)	1000 V	10 çA	8 A	DO-214AB SMC	Standard	63 pF	150 °C	-55 °C	Surface Mount	985 mV			2 A 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 8A Surface Mount DO-214AB (SMC)

Technical documentation and resources