Specification	HUF75329D3ST

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1060 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	128 W
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

HUF75329D3S Series

N-Channel UltraFET Power MOSFET 55V, 20A, 26mΩ

Part	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Power Dissipation (Max) [Max]	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor HUF75329D3ST	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	175 ░C	10 V	TO-252AA	128 W	N-Channel	26 mOhm	Surface Mount	20 A	MOSFET (Metal Oxide)	20 V	55 V	1060 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.61
		10	$ 1.02
		100	$ 0.69
		500	$ 0.54
		1000	$ 0.49
	Digi-Reel®	1	$ 1.61
		10	$ 1.02
		100	$ 0.69
		500	$ 0.54
		1000	$ 0.49
	Tape & Reel (TR)	2500	$ 0.44
		5000	$ 0.41
		7500	$ 0.40
Newark	Each (Supplied on Full Reel)	1	$ 0.56
		3000	$ 0.53
		6000	$ 0.48
		12000	$ 0.44
		18000	$ 0.42
		30000	$ 0.41
ON Semiconductor	N/A	1	$ 0.43

Description

General part information

HUF75329D3S Series

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.Formerly developmental type TA75329.