Discrete Semiconductor Products

PMG85XPH

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PMG85XP - 20 V, 2 A P-CHANNEL TRENCH MOSFET@EN-US TSSOP 6-PIN

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Discrete Semiconductor Products

Active

PMG85XP - 20 V, 2 A P-CHANNEL TRENCH MOSFET@EN-US TSSOP 6-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PMG85XPH

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.2 nC
Input Capacitance (Ciss) (Max) @ Vds	560 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max)	375 mW, 2.4 W
Rds On (Max) @ Id, Vgs	115 mOhm
Supplier Device Package	6-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.15 V

Part	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package / Case	Supplier Device Package
Freescale Semiconductor - NXP PMG85XPH	20 V	Surface Mount	115 mOhm	12 V	MOSFET (Metal Oxide)	2 A	7.2 nC	560 pF	1.15 V	-55 °C	150 °C	P-Channel	2.5 V 4.5 V	2.4 W 375 mW	6-TSSOP SC-88 SOT-363	6-TSSOP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 2A (Tj) 375mW (Ta), 2.4W (Tc) Surface Mount 6-TSSOP

Technical documentation and resources