Discrete Semiconductor Products

PMG85XPH

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MOSFET P-CH 20V 2A 6TSSOP

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Discrete Semiconductor Products

Active

MOSFET P-CH 20V 2A 6TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	PMG85XPH

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	7.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	560 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-363, SC-88, 6-TSSOP
Power Dissipation (Max)	375 mW, 2.4 W
Rds On (Max) @ Id, Vgs	115 mOhm
Supplier Device Package	6-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.15 V

Part	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type
Nexperia USA Inc. PMG85XPH	7.2 nC	2.5 V	4.5 V	115 mOhm	MOSFET (Metal Oxide)	560 pF	20 V	6-TSSOP	Surface Mount	6-TSSOP SC-88 SOT-363	2.4 W 375 mW	2 A	150 °C	-55 °C	1.15 V	12 V	P-Channel

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General part information

P-Channel 20 V 2A (Tj) 375mW (Ta), 2.4W (Tc) Surface Mount 6-TSSOP

Technical documentation and resources