Discrete Semiconductor Products

FFPF05U60STU

Obsolete

DIODE GEN PURP 600V 5A TO220F-2L

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 600V 5A TO220F-2L

Technical Specifications

Parameters and characteristics for this part

Specification	FFPF05U60STU

Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	2.5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	80 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220F-2L
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.3 V

Part	Reverse Recovery Time (trr)	Supplier Device Package	Technology	Diode Configuration	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io) (per Diode)	Speed	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Package / Case	Current - Average Rectified (Io)
ON Semiconductor FFPF05U60DNTU	80 ns	TO-220F-3	Avalanche	1 Pair Common Cathode	Through Hole	150 °C	-65 C	5 A	200 mA 500 ns	2.5 µA	600 V	2.3 V	TO-220-3 Full Pack
ON Semiconductor FFPF05U60STU	80 ns	TO-220F-2L	Avalanche		Through Hole	150 °C	-65 C		200 mA 500 ns	2.5 µA	600 V	2.3 V	TO-220-2 Full Pack	5 A
ON Semiconductor FFPF05U60DNTU	80 ns	TO-220F-3	Standard	1 Pair Common Cathode	Through Hole	150 °C	-65 C	5 A	200 mA 500 ns	2.5 µA	600 V	2.3 V	TO-220-3 Full Pack
ON Semiconductor FFPF05U60STTU	80 ns	TO-220F-2L	Avalanche		Through Hole	150 °C	-65 C		200 mA 500 ns	2.5 µA	600 V	2.3 V	TO-220-2 Full Pack	5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 5A Through Hole TO-220F-2L

Technical documentation and resources