MCQD08N03A-TP

Active

MOSFET 2N-CH 30V 8.5A 8SOP

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET 2N-CH 30V 8.5A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	MCQD08N03A-TP

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8.5 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	5.2 nC
Input Capacitance (Ciss) (Max) @ Vds	490 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	3 W
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Power - Max [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Configuration	Vgs(th) (Max) @ Id [Max]
Micro Commercial Components MCQD08N03A-TP	MOSFET (Metal Oxide)	-55 °C	150 °C	8.5 A	23 mOhm	490 pF	Surface Mount	3 W	30 V	5.2 nC	8-SOIC	3.9 mm	0.154 in	8-SOP	2 N-Channel (Dual)	2.2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 30V 8.5A 3W Surface Mount 8-SOP

Technical documentation and resources