Discrete Semiconductor Products

SIJA72ADP-T1-GE3

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MOSFET N-CH 40V 27.9A/96A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 40V 27.9A/96A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIJA72ADP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	96 A
Current - Continuous Drain (Id) @ 25°C	27.9 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	2530 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	4.8 W, 56.8 W
Rds On (Max) @ Id, Vgs	3.42 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type
Vishay General Semiconductor - Diodes Division SIJA72ADP-T1-GE3	PowerPAK® SO-8	40 V	4.5 V 10 V	2530 pF	3.42 mOhm	4.8 W 56.8 W	2.4 V	96 A	27.9 A	N-Channel	50 nC	PowerPAK® SO-8	-16 V 20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount

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General part information

N-Channel 40 V 27.9A (Ta), 96A (Tc) 4.8W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources