Discrete Semiconductor Products

IRFP054PBF

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MOSFET N-CH 60V 70A TO247-3

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Discrete Semiconductor Products

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MOSFET N-CH 60V 70A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRFP054PBF

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	160 nC
Input Capacitance (Ciss) (Max) @ Vds	4500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	230 W
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Type	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division IRFP054PBF	160 nC	10 V	TO-247-3	60 V	Through Hole	20 V	70 A	4 V	14 mOhm	-55 °C	175 ░C	TO-247AC	4500 pF	MOSFET (Metal Oxide)	N-Channel	230 W

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General part information

N-Channel 60 V 70A (Tc) 230W (Tc) Through Hole TO-247AC

Technical documentation and resources

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