Discrete Semiconductor Products

CPH3351-TL-W

Obsolete

MOSFET P-CH 60V 1.8A 3CPH

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 60V 1.8A 3CPH

Technical Specifications

Parameters and characteristics for this part

Specification	CPH3351-TL-W

Current - Continuous Drain (Id) @ 25°C	1.8 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	6 nC
Input Capacitance (Ciss) (Max) @ Vds	262 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	250 mOhm
Supplier Device Package	3-CPH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

Part	Technology	FET Type	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type
ON Semiconductor CPH3351-TL-W	MOSFET (Metal Oxide)	P-Channel	3-CPH	1 W	1.8 A	20 V	150 °C	262 pF	SC-59 SOT-23-3 TO-236-3	250 mOhm	4 V	10 V	6 nC	60 V	2.6 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 1.8A (Ta) 1W (Ta) Surface Mount 3-CPH

Technical documentation and resources

No documents available