Discrete Semiconductor Products

SI6463BDQ-T1-GE3

Obsolete

MOSFET P-CH 20V 6.2A 8-TSSOP

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 6.2A 8-TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI6463BDQ-T1-GE3

Current - Continuous Drain (Id) (Ta)	6.2 A
Drain to Source Voltage (Vdss)	20 V
FET Type	P-Channel
Gate Charge (Max)	60 nC
Mounting Type	Surface Mount
Package Length	0.173 in
Package Name	8-TSSOP
Package Width	4.4 mm
Rds On (Max)	15 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	800 mV

Part	Current - Continuous Drain (Id) (Ta)	Package Name	Drain to Source Voltage (Vdss)	Package Length	Package Width	Mounting Type	FET Type	Gate Charge (Max)	Technology	Rds On (Max)	Vgs(th) (Max)
Vishay Dale SI6463BDQ-T1-GE3	6.2 A	8-TSSOP	20 V	0.173 in	4.4 mm	Surface Mount	P-Channel	60 nC	MOSFET (Metal Oxide)	15 mOhm	800 mV
Vishay Dale SI6463BDQ-T1-E3	6.2 A	8-TSSOP	20 V	0.173 in	4.4 mm	Surface Mount	P-Channel	60 nC	MOSFET (Metal Oxide)	15 mOhm	800 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

3D models and CAD resources for this part

General part information

P-Channel 20 V 6.2A (Ta) Surface Mount 8-TSSOP

Technical documentation and resources