Discrete Semiconductor Products

SI6463BDQ-T1-GE3

Obsolete

MOSFET P-CH 20V 6.2A 8-TSSOP

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 6.2A 8-TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI6463BDQ-T1-GE3

Current - Continuous Drain (Id) @ 25°C	6.2 A
Drain to Source Voltage (Vdss)	20 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Mounting Type	Surface Mount
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Rds On (Max) @ Id, Vgs [Max]	15 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	800 mV

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [custom]	Package / Case [custom]	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package
Vishay General Semiconductor - Diodes Division SI6463BDQ-T1-GE3	60 nC	Surface Mount	800 mV	P-Channel	20 V	8-TSSOP	0.173 "	4.4 mm	MOSFET (Metal Oxide)	6.2 A	15 mOhm	8-TSSOP
Vishay General Semiconductor - Diodes Division SI6463BDQ-T1-E3	60 nC	Surface Mount	800 mV	P-Channel	20 V	8-TSSOP	0.173 "	4.4 mm	MOSFET (Metal Oxide)	6.2 A	15 mOhm	8-TSSOP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 6.2A (Ta) Surface Mount 8-TSSOP

Technical documentation and resources