Discrete Semiconductor Products

BUK9K18-40E,115

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MOSFET 2N-CH 40V 30A LFPAK56D

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Discrete Semiconductor Products

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MOSFET 2N-CH 40V 30A LFPAK56D

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9K18-40E,115

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	40 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	14.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1061 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power - Max [Max]	38 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	16 mOhm
Supplier Device Package	LFPAK56D
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

Part	Technology	Qualification	Drain to Source Voltage (Vdss)	Grade	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Configuration	Mounting Type	Power - Max [Max]	FET Feature	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]
Freescale Semiconductor - NXP BUK9K18-40E,115	MOSFET (Metal Oxide)	AEC-Q101	40 V	Automotive	LFPAK56D	30 A	8-LFPAK56 SOT-1205	2 N-Channel (Dual)	Surface Mount	38 W	Logic Level Gate	14.5 nC	2.1 V	1061 pF	-55 °C	175 ░C	16 mOhm

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General part information

Mosfet Array 40V 30A 38W Surface Mount LFPAK56D

Technical documentation and resources