Discrete Semiconductor Products

BCP52-10,135

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60 V, 1 A PNP MEDIUM POWER TRANSISTOR@EN-US SC-73 4-PIN

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Discrete Semiconductor Products

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60 V, 1 A PNP MEDIUM POWER TRANSISTOR@EN-US SC-73 4-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	BCP52-10,135

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	63 hFE
Frequency - Transition	145 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-261AA, TO-261-4
Power - Max	1.3 W
Qualification	AEC-Q100
Supplier Device Package	SOT-223
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Package / Case	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Grade	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Qualification	Power - Max [Max]	Supplier Device Package	Operating Temperature	Power - Max
Freescale Semiconductor - NXP BCP52,135	TO-261-4 TO-261AA	PNP	60 V	100 nA	63 hFE	Automotive	500 mV	Surface Mount	145 MHz	1 A	AEC-Q100	1 W	SOT-223	150 °C
Freescale Semiconductor - NXP BCP52-16,115	TO-261-4 TO-261AA	PNP	60 V	100 nA	100	Automotive	500 mV	Surface Mount	145 MHz	1 A	AEC-Q100	1 W	SOT-223	150 °C
Freescale Semiconductor - NXP BCP52-10,135	TO-261-4 TO-261AA	PNP	60 V	100 nA	63 hFE	Automotive	500 mV	Surface Mount	145 MHz	1 A	AEC-Q100		SOT-223	150 °C	1.3 W
Freescale Semiconductor - NXP BCP52-10TF	TO-261-4 TO-261AA	PNP	60 V	100 nA	63 hFE	Automotive	500 mV	Surface Mount	140 MHz	1 A	AEC-Q101		SOT-223	150 °C	1.3 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 60 V 1 A 145MHz 1.3 W Surface Mount SOT-223

Technical documentation and resources