Specification	NVD260N65S3T4G

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1042 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	90 W
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

NVD260N65S3 Series

Single N-Channel Power MOSFET SUPERFET® III, Easy Drive, 650 V , 12 A, 260 mΩ, DPAK

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)
ON Semiconductor NVD260N65S3T4G	12 A	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C	30 V	1042 pF	N-Channel	MOSFET (Metal Oxide)	4.5 V	650 V	DPAK	23.5 nC	10 V	90 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.31
		10	$ 2.16
		100	$ 1.50
		500	$ 1.22
		1000	$ 1.13
	Digi-Reel®	1	$ 3.31
		10	$ 2.16
		100	$ 1.50
		500	$ 1.22
		1000	$ 1.13
	Tape & Reel (TR)	2500	$ 1.08
Newark	Each (Supplied on Full Reel)	1	$ 1.46
		3000	$ 1.37
		6000	$ 1.30
		12000	$ 1.17
		18000	$ 1.13
		30000	$ 1.09
ON Semiconductor	N/A	1	$ 1.16

Description

General part information

NVD260N65S3 Series

- SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability