Discrete Semiconductor Products

RD3G400GNTL

NRND

MOSFET N-CH 40V 40A TO252

Search across all available documentation for this part.

Discrete Semiconductor Products

NRND

MOSFET N-CH 40V 40A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	RD3G400GNTL

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	1410 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	26 W
Rds On (Max) @ Id, Vgs	7.5 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Package / Case	Supplier Device Package	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	FET Type
Rohm Semiconductor RD3G400GNTL	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252	150 °C	1410 pF	2.5 V	40 V	26 W	7.5 mOhm	4.5 V 10 V	20 V	Surface Mount	19 nC	MOSFET (Metal Oxide)	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 40A (Tc) 26W (Tc) Surface Mount TO-252

Technical documentation and resources

No documents available