Discrete Semiconductor Products

MUR60120B-BP

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DIODE GEN PURP 1.2KV 60A TO247AD

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Discrete Semiconductor Products

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DIODE GEN PURP 1.2KV 60A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	MUR60120B-BP

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	15 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	85 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	3.3 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Capacitance @ Vr, F	Current - Average Rectified (Io)	Speed	Technology	Supplier Device Package	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Mounting Type
Micro Commercial Components MUR60120BS-BP	1.2 kV	TO-247-2	170 pF	60 A	200 mA 500 ns	Standard	TO-247AD	130 ns	150 °C	-55 °C	3.3 V	5 µA	Through Hole
Micro Commercial Components MUR60120B-BP	1.2 kV	TO-247-2		60 A	200 mA 500 ns	Standard	TO-247AD	85 ns	175 ░C	-55 C	3.3 V	15 µA	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 60A Through Hole TO-247AD

Technical documentation and resources