Specification	MBRB2515LG

Current - Average Rectified (Io)	25 A
Current - Reverse Leakage @ Vr	15 mA
Mounting Type	Surface Mount
Operating Temperature - Junction	100 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Speed	200 mA, 500 ns
Supplier Device Package	D2PAK
Technology	Schottky
Voltage - Forward (Vf) (Max) @ If	450 mV

MBRB2515L Series

Schottky Barrier Rectifier, 15 V, 25 A

Part	Supplier Device Package	Current - Reverse Leakage @ Vr	Package / Case	Speed	Operating Temperature - Junction	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Technology	Current - Average Rectified (Io)
ON Semiconductor MBRB2515L	D2PAK	15 mA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 mA 500 ns	100 °C	Surface Mount	450 mV	Schottky	25 A
ON Semiconductor MBRB2515LG	D2PAK	15 mA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 mA 500 ns	100 °C	Surface Mount	450 mV	Schottky	25 A
ON Semiconductor MBRB2515LT4	D2PAK	15 mA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 mA 500 ns		Surface Mount	450 mV	Schottky	25 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MBRB2515L Series

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.