Discrete Semiconductor Products

2SD669-C-BP

Obsolete

TRANS NPN 120V 1.5A TO-126

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 120V 1.5A TO-126

Technical Specifications

Parameters and characteristics for this part

Specification	2SD669-C-BP

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	140 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	1 W
Supplier Device Package	TO-126
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

Part	Mounting Type	Current - Collector Cutoff (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case
Micro Commercial Components 2SD669-C-BP	Through Hole	10 µA	NPN	100	TO-126	-55 °C	150 °C	140 MHz	1.5 A	1 V	1 W	120 V	TO-126-3 TO-225AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 120 V 1.5 A 140MHz 1 W Through Hole TO-126

Technical documentation and resources