Discrete Semiconductor Products

2SJ182STR-E

LTB

PCH SINGLE POWER MOSFET -60V -3A 400MOHM DPAK(S)

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Discrete Semiconductor Products

LTB

PCH SINGLE POWER MOSFET -60V -3A 400MOHM DPAK(S)

Technical Specifications

Parameters and characteristics for this part

Specification	2SJ182STR-E

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	DPAK-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Pch Single Power Mosfet -60V -3A 400Mohm DPAK(S)

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Power Dissipation (Max)
Renesas Electronics Corporation 2SJ182STR-E	10 V	20 V	400 mOhm	150 °C	3 A	N-Channel	MOSFET (Metal Oxide)	60 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	2 V	DPAK-3	Surface Mount	20 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.71

General part information

The 2SJ182S is a Pch Single Power Mosfet -60V -3A 400Mohm DPAK(S).

Technical documentation and resources