Discrete Semiconductor Products

PEMD20,115

NRND

PEMD20; PUMD20 - NPN/PNP RESISTOR-EQUIPPED TRANSISTORS; R1 = 2.2 KOHM, R2 = 2.2 KOHM SOT 6-PIN

Search across all available documentation for this part.

Discrete Semiconductor Products

NRND

PEMD20; PUMD20 - NPN/PNP RESISTOR-EQUIPPED TRANSISTORS; R1 = 2.2 KOHM, R2 = 2.2 KOHM SOT 6-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PEMD20,115

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	300 mW
Resistor - Base (R1)	2.2 kOhm
Resistor - Emitter Base (R2)	2.2 kOhms
Supplier Device Package	SOT-666
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	150 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Resistor - Emitter Base (R2)	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Resistor - Base (R1)	Package / Case	Mounting Type	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic
Freescale Semiconductor - NXP PEMD20,115	2.2 kOhms	100 mA	300 mW	SOT-666	30	1 NPN 1 PNP	2.2 kOhm	SOT-563 SOT-666	Surface Mount	1 µA	50 V	150 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666

Technical documentation and resources