Discrete Semiconductor Products

FQA35N40

Obsolete

ON Semiconductor

MOSFET N-CH 400V 35A TO3P

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Discrete Semiconductor Products

FQA35N40

Obsolete

ON Semiconductor

MOSFET N-CH 400V 35A TO3P

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FQA35N40

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	140 nC
Input Capacitance (Ciss) (Max) @ Vds	5600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	310 W
Rds On (Max) @ Id, Vgs	105 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FQA38N30 Series

N-Channel QFET<sup>®</sup> MOSFET 300 V, 38.4 A, 85 mΩ

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FQA34N25	250 V	30 V	Through Hole	80 nC	-55 °C	150 °C	TO-3P	MOSFET (Metal Oxide)	5 V	34 A	N-Channel	SC-65-3 TO-3P-3	10 V	2750 pF	85 mOhm	245 W
ON Semiconductor FQA34N25	250 V	30 V	Through Hole	80 nC	-55 °C	150 °C	TO-3P	MOSFET (Metal Oxide)	5 V	34 A	N-Channel	SC-65-3 TO-3P-3	10 V	2750 pF	85 mOhm	245 W
ON Semiconductor FQA34N20L	200 V	20 V	Through Hole	72 nC	-55 °C	150 °C	TO-3P	MOSFET (Metal Oxide)	2 V	34 A	N-Channel	SC-65-3 TO-3P-3			75 mOhm	210 W	10 V	5 V	3900 pF
ON Semiconductor FQA36P15_F109	150 V	30 V	Through Hole	105 nC	-55 °C	175 ░C	TO-3PN	MOSFET (Metal Oxide)	4 V	36 A	P-Channel	SC-65-3 TO-3P-3	10 V		90 mOhm	294 W			3320 pF
ON Semiconductor FQA35N40	400 V	30 V	Through Hole		-55 °C	150 °C	TO-3P	MOSFET (Metal Oxide)	5 V	35 A	N-Channel	SC-65-3 TO-3P-3	10 V		105 mOhm				5600 pF	310 W	140 nC
ON Semiconductor FQA38N30	300 V	30 V	Through Hole		-55 °C	150 °C	TO-3P	MOSFET (Metal Oxide)	5 V	38.4 A	N-Channel	SC-65-3 TO-3P-3	10 V		85 mOhm	290 W			4400 pF		120 nC
ON Semiconductor FQA34N20L	200 V	20 V	Through Hole	72 nC	-55 °C	150 °C	TO-3P	MOSFET (Metal Oxide)	2 V	34 A	N-Channel	SC-65-3 TO-3P-3			75 mOhm	210 W	10 V	5 V	3900 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQA38N30 Series

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.

Documents

Technical documentation and resources