Discrete Semiconductor Products

PDTB113EK,115

Obsolete

TRANS PREBIAS PNP 50V 0.5A SMT3

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Discrete Semiconductor Products

Obsolete

TRANS PREBIAS PNP 50V 0.5A SMT3

Technical Specifications

Parameters and characteristics for this part

Specification	PDTB113EK,115

Current - Collector (Ic) (Max)	500 mA
Current - Collector Cutoff (Max)	500 nA
DC Current Gain (hFE) (Min)	33
Mounting Type	Surface Mount
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SMT3; MPAK
Power - Max	250 mW
Resistor - Base (R1) Resistance	1 kOhm
Resistor - Emitter Base (R2)	1 kOhm
Resistors Included	R1, R2
Transistor Type	Pre-Biased, PNP
Vce Saturation (Max)	300 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

Part	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistors Included	DC Current Gain (hFE) (Min)	Current - Collector Cutoff (Max)	Resistor - Emitter Base (R2)	Package Name	Transistor Type	Resistor - Base (R1) Resistance	Vce Saturation (Max)	Power - Max	Package / Case	Mounting Type
NXP USA Inc. PDTB113EK,115	500 mA	50 V	R1 R2	33	500 nA	1 kOhm	SMT3; MPAK	PNP Pre-Biased	1 kOhm	300 mV	250 mW	SC-59 SOT-23-3 TO-236-3	Surface Mount
NXP USA Inc. PDTB113ES,126	500 mA	50 V		33	500 nA	1 kOhm	TO-92-3	PNP Pre-Biased	1 kOhm	300 mV	0.5 W	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

3D models and CAD resources for this part

General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 500 mA 250 mW Surface Mount SMT3; MPAK

Technical documentation and resources