Deep-Dive with AI
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Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DTD743EETL |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 200 mA |
| Current - Collector Cutoff (Max) [Max] | 500 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 115 hFE |
| Mounting Type | Surface Mount |
| Package / Case | SC-75, SOT-416 |
| Power - Max [Max] | 150 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4700 Ohms |
| Supplier Device Package | EMT3 |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.47 | |
| Digi-Reel® | 1 | $ 0.47 | ||
| Tape & Reel (TR) | 3000 | $ 0.10 | ||
| 6000 | $ 0.09 | |||
| 9000 | $ 0.09 | |||
| 15000 | $ 0.08 | |||
| 21000 | $ 0.08 | |||
| 30000 | $ 0.08 | |||
| 75000 | $ 0.07 | |||
Description
General part information
DTD743 Series
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 30 V 200 mA 260 MHz 150 mW Surface Mount EMT3
Documents
Technical documentation and resources
No documents available
