Discrete Semiconductor Products
IXTK20N150
ActiveLittelfuse/Commercial Vehicle Products
DISCMOSFET N-CH STD-HIVOLTAGE TO-264(3)/ TUBE
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Discrete Semiconductor Products
IXTK20N150
ActiveLittelfuse/Commercial Vehicle Products
DISCMOSFET N-CH STD-HIVOLTAGE TO-264(3)/ TUBE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IXTK20N150 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A |
| Drain to Source Voltage (Vdss) | 1500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 215 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 7800 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-264AA, TO-264-3 |
| Power Dissipation (Max) | 1250 W |
| Rds On (Max) @ Id, Vgs | 1 Ohm |
| Supplier Device Package | TO-264 (IXTK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IXTK20N150 Series
The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators. Advantages: Easy to mount Space savings High power density