Discrete Semiconductor Products

SIZ342ADT-T1-GE3

LTB

MOSFET 2N-CH 30V 15.7A 8PWR33

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Discrete Semiconductor Products

LTB

MOSFET 2N-CH 30V 15.7A 8PWR33

Technical Specifications

Parameters and characteristics for this part

Specification	SIZ342ADT-T1-GE3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	15.7 A
Current - Continuous Drain (Id) (Tc)	33.4 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Max)	12.2 nC
Input Capacitance (Ciss) (Max)	580 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerWDFN
Package Length	3 mm
Package Name	8-Power33
Package Width	3 mm
Power - Max (Ta)	3.7 W
Power - Max (Tc)	16.7 W
Rds On (Max)	9.4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.4 V

Part	Technology	Gate Charge (Max)	Package Name	Package Length	Package Width	Mounting Type	Vgs(th) (Max)	Rds On (Max)	Channel Count	Configuration	Configuration - Features	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Power - Max (Tc)	Power - Max (Ta)
Vishay Dale SIZ342ADT-T1-GE3	MOSFET (Metal Oxide)	12.2 nC	8-Power33	3 mm	3 mm	Surface Mount	2.4 V	9.4 mOhm	2	N-Channel	Dual	580 pF	-55 °C	150 °C	8-PowerWDFN	15.7 A	33.4 A	30 V	16.7 W	3.7 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

Mosfet Array 30V 15.7A (Ta), 33.4A (Tc) 3.7W (Ta), 16.7W (Tc) Surface Mount 8-Power33 (3x3)

Technical documentation and resources