Discrete Semiconductor Products

SIZ342ADT-T1-GE3

LTB

MOSFET 2N-CH 30V 15.7A 8PWR33

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Discrete Semiconductor Products

LTB

MOSFET 2N-CH 30V 15.7A 8PWR33

Technical Specifications

Parameters and characteristics for this part

Specification	SIZ342ADT-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	33.4 A, 15.7 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	12.2 nC
Input Capacitance (Ciss) (Max) @ Vds	580 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max	3.7 W, 16.7 W
Rds On (Max) @ Id, Vgs	9.4 mOhm
Supplier Device Package	8-Power33 (3x3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.4 V

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power - Max	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SIZ342ADT-T1-GE3	Surface Mount	15.7 A 33.4 A	3.7 W 16.7 W	2.4 V	30 V	12.2 nC	-55 °C	150 °C	2 N-Channel (Dual)	8-Power33 (3x3)	580 pF	8-PowerWDFN	MOSFET (Metal Oxide)	9.4 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 30V 15.7A (Ta), 33.4A (Tc) 3.7W (Ta), 16.7W (Tc) Surface Mount 8-Power33 (3x3)

Technical documentation and resources