Discrete Semiconductor Products

VS-60APU02-N3

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DIODE GEN PURP 200V 60A TO247AC

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Discrete Semiconductor Products

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DIODE GEN PURP 200V 60A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-60APU02-N3

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	28 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.08 V

Part	Mounting Type	Speed	Technology	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]
Vishay General Semiconductor - Diodes Division VS-60APU02-N3	Through Hole	200 mA 500 ns	Standard	TO-247AC	1.08 V	50 µA	TO-247-3	175 ░C	-55 C	28 ns	60 A	200 V
Vishay General Semiconductor - Diodes Division 60APU02	Through Hole	200 mA 500 ns	Standard	TO-247AC	1.08 V	50 µA	TO-247-3	175 ░C	-55 C	35 ns	60 A	200 V

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General part information

Diode 200 V 60A Through Hole TO-247AC

Technical documentation and resources

No documents available