Zenode.ai Logo
Beta
PowerDI3333-8
Discrete Semiconductor Products

DMT47M2LDVQ-13

Active
Diodes Inc

MOSFET ARRAY DUAL N CHANNEL ENHANCEMENT 40V 30.2A 10.8 MOHM 8-PIN POWERDI3333 T/R

Deep-Dive with AI

Search across all available documentation for this part.

PowerDI3333-8
Discrete Semiconductor Products

DMT47M2LDVQ-13

Active
Diodes Inc

MOSFET ARRAY DUAL N CHANNEL ENHANCEMENT 40V 30.2A 10.8 MOHM 8-PIN POWERDI3333 T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT47M2LDVQ-13
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C30.2 A, 11.9 A
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs14 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds891 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power - Max2.34 W, 14.8 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs10.8 mOhm
Supplier Device PackagePowerDI3333-8 (Type UXC)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.3 V

DMT47M2SFVWQ Series

40V 175°C N-Channel Enhancement Mode MOSFET

PartConfigurationGradeMounting TypePower - MaxCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdRds On (Max) @ Id, VgsDrain to Source Voltage (Vdss)Gate Charge (Qg) (Max) @ VgsSupplier Device PackagePackage / CaseInput Capacitance (Ciss) (Max) @ VdsQualificationOperating Temperature [Min]Operating Temperature [Max]TechnologyDrive Voltage (Max Rds On, Min Rds On)FET TypePower Dissipation (Max)Gate Charge (Qg) (Max) @ Vgs [Max]Vgs (Max)
PowerDI3333-8
Diodes Inc
2 N-Channel (Dual)
Automotive
Surface Mount
2.34 W
14.8 W
11.9 A
30.2 A
2.3 V
10.8 mOhm
40 V
14 nC
PowerDI3333-8 (Type UXC)
8-PowerVDFN
891 pF
AEC-Q101
-55 °C
150 °C
MOSFET (Metal Oxide)
PowerDI3333-8 (SWP) Top
Diodes Inc
Surface Mount
Wettable Flank
15.4 A
49.1 A
4 V
7.5 mOhm
40 V
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
897 pF
-55 °C
150 °C
MOSFET (Metal Oxide)
10 V
N-Channel
2.67 W
27.1 W
12.1 nC
20 V
PowerDI3333-8 (SWP) Top
Diodes Inc
Automotive
Surface Mount
Wettable Flank
15.4 A
49.1 A
4 V
7.5 mOhm
40 V
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
897 pF
AEC-Q101
-55 °C
150 °C
MOSFET (Metal Oxide)
10 V
N-Channel
2.67 W
27.1 W
12.1 nC
20 V
PowerDI3333-8 (SWP) Top
Diodes Inc
Automotive
Surface Mount
Wettable Flank
15.4 A
49.1 A
4 V
7.5 mOhm
40 V
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
897 pF
AEC-Q101
-55 °C
150 °C
MOSFET (Metal Oxide)
10 V
N-Channel
2.67 W
27.1 W
12.1 nC
20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.64
10$ 1.04
100$ 0.70
500$ 0.55
1000$ 0.50
Digi-Reel® 1$ 1.64
10$ 1.04
100$ 0.70
500$ 0.55
1000$ 0.50
Tape & Reel (TR) 3000$ 0.44
6000$ 0.41

Description

General part information

DMT47M2SFVWQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: motor controls, power-management functions, and DC-DC converters.

Documents

Technical documentation and resources