Discrete Semiconductor Products

NTTFS002N04CLTAG

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POWER MOSFET, 40V, 2.2MOHM, 142A, SINGLE N-CHANNEL

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Discrete Semiconductor Products

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POWER MOSFET, 40V, 2.2MOHM, 142A, SINGLE N-CHANNEL

Technical Specifications

Parameters and characteristics for this part

Specification	NTTFS002N04CLTAG

Current - Continuous Drain (Id) @ 25°C	142 A, 28 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 V, 49 nC
Input Capacitance (Ciss) (Max) @ Vds	2940 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	3.2 W, 85 W
Rds On (Max) @ Id, Vgs	2.2 mOhm
Supplier Device Package	8-WDFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Power MOSFET, 40V, 2.2mOhm, 142A, Single N-Channel

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor NTTFS002N04CLTAG	8-PowerWDFN	2940 pF	40 V	Surface Mount	N-Channel	MOSFET (Metal Oxide)	28 A 142 A	2 V	3.2 W 85 W	-55 °C	175 ░C	8-WDFN (3.3x3.3)	2.2 mOhm	10 V 49 nC	20 V	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Industrial Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance.