Specification	SSM3K7002KF,LF

Current - Continuous Drain (Id) @ 25°C	400 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.6 nC
Input Capacitance (Ciss) (Max) @ Vds	40 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	270 mW
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	S-Mini
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

SSM3K7002 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 0.4 A, 1.5 Ω@10V, SOT-346(S-Mini)

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	Operating Temperature	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]
Toshiba Semiconductor and Storage SSM3K7002BF,LF	2.1 Ohm	200 mA	SC-59	17 pF	SC-59 SOT-23-3 TO-236-3	60 V	200 mW	MOSFET (Metal Oxide)	150 °C	N-Channel	4.5 V 10 V	20 V	Surface Mount
Toshiba Semiconductor and Storage SSM3K7002CFU,LF	3.9 Ohm	170 mA	USM	17 pF	SC-70 SOT-323	60 V		MOSFET (Metal Oxide)	150 °C	N-Channel	4.5 V 10 V	20 V	Surface Mount	0.35 nC	150 mW	2.1 V
Toshiba Semiconductor and Storage SSM3K7002BS,LF	2.1 Ohm	200 mA	S-Mini	17 pF	SC-59 SOT-23-3 TO-236-3	60 V	200 mW	MOSFET (Metal Oxide)	150 °C	N-Channel	4.5 V 10 V	20 V	Surface Mount			2.5 V
Toshiba Semiconductor and Storage SSM3K7002KF,LF	1.5 Ohm	400 mA	S-Mini	40 pF	SC-59 SOT-23-3 TO-236-3	60 V	270 mW	MOSFET (Metal Oxide)		N-Channel	4.5 V 10 V	20 V	Surface Mount	0.6 nC		2.1 V	150 °C	-55 °C
Toshiba Semiconductor and Storage SSM3K7002KFU,LF	1.5 Ohm	400 mA	USM	40 pF	SC-70 SOT-323	60 V		MOSFET (Metal Oxide)	150 °C	N-Channel	4.5 V 10 V	20 V	Surface Mount	0.6 nC	150 mW	2.1 V
Toshiba Semiconductor and Storage SSM3K7002BSU,LF	2.1 Ohm	200 mA	USM	17 pF	SC-70 SOT-323	60 V		MOSFET (Metal Oxide)	150 °C	N-Channel	4.5 V 10 V	20 V	Surface Mount		150 mW	3.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 0.4 A, 1.5 Ω@10V, SOT-346(S-Mini)

Technical documentation and resources