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ONSEMI FDC6303N
Discrete Semiconductor Products

HFA3134IHZ96

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Renesas Electronics Corporation

BIPOLAR TRANSISTOR ARRAY, DUAL NPN, 9 V, 26 MA

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ONSEMI FDC6303N
Discrete Semiconductor Products

HFA3134IHZ96

Active
Renesas Electronics Corporation

BIPOLAR TRANSISTOR ARRAY, DUAL NPN, 9 V, 26 MA

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationHFA3134IHZ96
Current - Collector (Ic) (Max)26 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]48
Frequency - Transition8.5 GHz
Mounting TypeSurface Mount
Noise Figure (dB Typ @ f)2.4 dB
Operating Temperature150 °C
Package / CaseSOT-23-6
Supplier Device Package6-SOT
Transistor Type2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 62$ 4.86
Cut Tape (CT) 1$ 5.68
10$ 5.13
25$ 4.89
100$ 4.25
250$ 4.20
Digi-Reel® 1$ 5.68
10$ 5.13
25$ 4.89
100$ 4.25
250$ 4.20
Tape & Reel (TR) 3000$ 4.20
NewarkEach 1$ 6.69
5$ 6.51

Description

General part information

HFA3134 Series

The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8. 5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low noise, making them ideal for high frequency amplifier and mixer applications. Both arrays are matched high frequency transistor pairs. The matching simplifies DC bias problems and it minimizes imbalances in differential amplifier configurations. Their high fT enables the design of UHF amplifiers which exhibit exceptional stability.

Documents

Technical documentation and resources