Discrete Semiconductor Products

SIUD401ED-T1-GE3

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MOSFET P-CH 30V 500MA PPAK 0806

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Discrete Semiconductor Products

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MOSFET P-CH 30V 500MA PPAK 0806

Technical Specifications

Parameters and characteristics for this part

Specification	SIUD401ED-T1-GE3

Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	33 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 0806
Power Dissipation (Max)	1.25 W
Rds On (Max) @ Id, Vgs	1.573 Ohm
Supplier Device Package	PowerPAK® 0806
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.4 V

Part	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type
Vishay General Semiconductor - Diodes Division SIUD401ED-T1-GE3	12 V	-55 °C	150 °C	PowerPAK® 0806	MOSFET (Metal Oxide)	10 V	2.5 V	1.573 Ohm	Surface Mount	500 mA	1.4 V	1.25 W	33 pF	2 nC	PowerPAK® 0806	30 V	P-Channel

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General part information

P-Channel 30 V 500mA (Ta) 1.25W (Ta) Surface Mount PowerPAK® 0806

Technical documentation and resources