Discrete Semiconductor Products

BUK9Y107-80EX

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MOSFET N-CH 80V 11.8A LFPAK56

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Discrete Semiconductor Products

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MOSFET N-CH 80V 11.8A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9Y107-80EX

Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	706 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	37 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	98 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2.1 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Grade	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Package / Case	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]
Freescale Semiconductor - NXP BUK9Y107-80EX	706 pF	98 mOhm	-55 °C	175 ░C	Surface Mount	Automotive	10 V	N-Channel	2.1 V	SC-100 SOT-669	AEC-Q101	5 V	80 V	MOSFET (Metal Oxide)	LFPAK56 Power-SO8	6.2 nC	37 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 80 V 11.8A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources