Discrete Semiconductor Products
TK16N60W,S1VF
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.19 Ω@10V, TO-247, DTMOSⅣ
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Discrete Semiconductor Products
TK16N60W,S1VF
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.19 Ω@10V, TO-247, DTMOSⅣ
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Technical Specifications
Parameters and characteristics for this part
| Specification | TK16N60W,S1VF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 15.8 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 38 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 130 W |
| Rds On (Max) @ Id, Vgs | 190 mOhm |
| Supplier Device Package | TO-247 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 3.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
TK16N60 Series
N-Channel 600 V 15.8A (Ta) 130W (Tc) Through Hole TO-247
Documents
Technical documentation and resources