Discrete Semiconductor Products

SUF15J-E3/54

Obsolete

DIODE GEN PURP 600V 1.5A GP20

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 600V 1.5A GP20

Technical Specifications

Parameters and characteristics for this part

Specification	SUF15J-E3/54

Current - Average Rectified (Io)	1.5 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Axial, DO-27, DO-201AA
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	GP20
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Current - Average Rectified (Io)	Technology	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Package / Case	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division SUF15J-E3/54	1.5 A	Standard	35 ns	1.8 V	GP20	Through Hole	600 V	150 °C	-55 °C	200 mA 500 ns	Axial DO-201AA DO-27	10 µA
Vishay General Semiconductor - Diodes Division SUF15J-E3/73	1.5 A	Standard	35 ns	1.8 V	GP20	Through Hole	600 V	150 °C	-55 °C	200 mA 500 ns	Axial DO-201AA DO-27	10 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 1.5A Through Hole GP20

Technical documentation and resources