Discrete Semiconductor Products
MMBT6517LT1G
ObsoleteON Semiconductor
HIGH VOLTAGE NPN BIPOLAR TRANSISTOR
Discrete Semiconductor Products
MMBT6517LT1G
ObsoleteON Semiconductor
HIGH VOLTAGE NPN BIPOLAR TRANSISTOR
Technical Specifications
Parameters and characteristics for this part
| Specification | MMBT6517LT1G |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 50 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 20 |
| Frequency - Transition | 200 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 225 mW |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 350 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MMBT6517L Series
This High Voltage NPN Bipolar Transistor is designed for general purpose amplifier applications. This device is housed in the SOT-23 package, which is designed for low power surface mount applications.
Documents
Technical documentation and resources