Specification	NTMYS020N08LHTWG

Current - Continuous Drain (Id) @ 25°C	30 A, 8.7 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	623 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1023, 4-LFPAK
Power Dissipation (Max)	3.5 W, 42 W
Rds On (Max) @ Id, Vgs	19.5 mOhm
Supplier Device Package	LFPAK4
Supplier Device Package [x]	5
Supplier Device Package [y]	6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NTMYS020N08HL Series

Power MOSFET 80 V, 30A, 19.5mΩ Single N-Channel

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)
ON Semiconductor NTMYS020N08LHTWG	N-Channel	8.7 A 30 A	3.5 W 42 W	SOT-1023 4-LFPAK	12 nC	19.5 mOhm	MOSFET (Metal Oxide)	-55 °C	175 ░C	5	LFPAK4	6	Surface Mount	20 V	4.5 V 10 V	623 pF	2 V	80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.