Specification	UPD48288236AF1-E24-DW1-A

Access Time	500 ps
Clock Frequency	400 MHz
Memory Format	DRAM
Memory Interface	HSTL
Memory Organization	8 M
Memory Size	288 Mbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	95 °C
Operating Temperature [Min]	0 °C
Package / Case	144-TBGA
Supplier Device Package	144-TFBGA (11x18.5)
Technology	LLDRAM
Voltage - Supply [Max]	1.9 V
Voltage - Supply [Min]	1.7 V

UPD48288236AF1-E24-DW1-A Series

Low Latency DRAM

Part	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Interface	Access Time	Clock Frequency	Memory Type	Supplier Device Package	Memory Format	Package / Case	Memory Organization	Mounting Type	Memory Size	Technology	Operating Temperature [Max]	Operating Temperature [Min]
Renesas Electronics Corporation UPD48288236AF1-E24-DW1-A	1.7 V	1.9 V	HSTL	500 ps	400 MHz	Volatile	144-TFBGA (11x18.5)	DRAM	144-TBGA	8 M	Surface Mount	288 Mbit	LLDRAM	95 °C	0 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1553	$ 53.88

Description

General part information

UPD48288236AF1-E24-DW1-A Series

Low Latency DRAM is our newest large-density memory boasting high performance. Incorporating high-performance technology used in our synchronous SRAM and the pseudo-SRAM technology used in mobile-specified RAM, Low Latency DRAM is ideal for use in various networking applications. With a Fast random access time-and data latency lower than other DRAM products-Low Latency DRAM realizes extremely high performance compared to commodity DRAM. Those features, combined with large density and lower cost per bit compared to SRAM solutions make Low Latency DRAM an attractive choice for use in next-generation, high-performance networking products.

Documents

Technical documentation and resources

UPD48288236AF1-E24-DW1-A | Datasheet

Datasheet